Datasheet > 2SD1802R-AH

2SD1802R-AH

更新时间： 2024-11-25 14:52:59

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	901K
描述
功率三极管

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2SD1802R-AH 数据手册

2SD1802R-AH

NPN Silicon Epitaxial Planar Power Transistor

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

T_C= 25

T_a= 25

31.25

2.5 ¹⁾

1 ²⁾

Collector Power Dissipation

P_C

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

Symbol

R_θJC

Max.

Unit

50 ¹⁾

R_θJA

125 ²⁾

¹⁾Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 17/03/2022 Rev: 02

12 3 4 5

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