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2SD1802 PDF预览

2SD1802

更新时间: 2024-11-06 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
2页 171K
描述
TRANSISTOR (NPN)

2SD1802 数据手册

 浏览型号2SD1802的Datasheet PDF文件第2页 
RoHS  
2SD1802  
6. 50¡ À0. 10  
5. 30¡ À0. 05  
2. 3 À0. 05  
0. 51¡ À0. 03  
TO-251  
TO-252-2  
2SD1802 TRANSISTOR (NPN)  
5¡  
ã
5¡ ã  
0. 80¡ À0. 05  
FEATURES  
0. 60¡ À0. 05  
Power dissipation  
1. BASE  
2. 30¡ À0. 05  
2. 30¡ À0. 05  
1. 20  
0. 51¡ À0. 03  
1 2 3  
PCM:  
1
3
W (Tamb=25)  
2. COLLECTOR  
3. EMITTER  
6. 50¡ À0. 15  
2. 30¡ À0. 10  
5. 30¡ 0À. 10  
0. 51¡ À0. 05  
Collector current  
ICM:  
1. 20  
0. 51¡ À0. 10  
0«. 10  
A
5¡  
ã
5¡  
ã
Collector-base voltage  
0. 80¡ 0À. 10  
0. 60¡ 0À. 10  
2. 30¡ À0. 10  
2. 30¡ 0À. 10  
0¡  
ã
«9¡  
¡
ã
V(BR)CBO  
:
60  
V
0. 51  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=10µAµ, IE=0  
Ic=1mA, IB=0  
MIN  
60  
50  
6
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=10µA, IC=0  
µA  
µA  
VCB=40V, IE=0  
1
1
IEBO  
Emitter cut-off current  
VEB=4V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
V
CE=2V, IC=100mA  
100  
35  
560  
DC current gain  
VCE=2V, IC=3A  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=2A, IB=100mA  
IC=2A, IB=100mA  
VCE=10V, IC=50mA  
CB=10V, IE=0,f=1MHz  
0.5  
1.2  
MHz  
pF  
150  
25  
Cob  
Collector output capacitance  
Turn-off time  
V
ton  
70  
Vcc=25V, Ic=1A  
IB1=-IB2=0.1A  
nS  
tf  
650  
Fall time  
ts  
35  
Storage time  
CLASSIFICATION OF h  
WEJ ELECTRONIC CO.,LTD  
FE(1)  
R
S
T
U
Rank  
100-200  
140-280  
200-400  
280-560  
Range  
Marking  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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