Datasheet > 2SD1802

2SD1802

更新时间： 2024-09-16 04:26:15

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
2页	95K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SD1802 数据手册

Transys

Electronics

I M I T E D

TO-251/TO-252-2Plastic-Encapsulated Transistors

6. 50¡ À0. 10

5. 30¡ À0. 05

2. 30¡ À0. 05

0. 51¡ À0. 03

TO-251

TO-252-2

2SD1802 TRANSISTOR (NPN)

5¡

5¡ ã

0. 80¡ À0. 05

FEATURES

0. 60¡ À0. 05

Power dissipation

1. BASE

2. 30¡ À0. 05

1. 20

0. 51¡ À0. 03

1 2 3

P_CM:

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

6. 50¡ À0. 15

2. 30¡ À0. 10

5. 30¡ À0. 10

0. 51¡ À0. 05

Collector current

I_CM:

1. 20

0. 51¡ À0. 10

0¡ 0«. 10

5¡

Collector-base voltage

0. 80¡ À0. 10

0. 60¡ À0. 10

2. 30¡ À0. 10

0¡

9«¡

V_(BR)CBO

0. 51

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=10µAµ, I_E=0

Ic=1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA, I_C=0

µA

V_CB=40V, I_E=0

I_EBO

Emitter cut-off current

V_EB=4V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

_CE=2V, I_C=100mA

100

560

DC current gain

V_CE=2V, I_C=3A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=2A, I_B=100mA

V_CE=10V, I_C=50mA

_CB=10V, I_E=0,f=1MHz

0.5

1.2

MHz

150

C_ob

Collector output capacitance

Turn-off time

t_on

Vcc=25V, Ic=1A

I_B1=-I_B2=0.1A

t_f

650

Fall time

t_s

Storage time

CLASSIFICATION OF h_FE(1)

Rank

100-200

140-280

200-400

280-560

Range

Marking

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