Datasheet > 2SD1801-U

2SD1801-U

更新时间： 2024-11-25 01:05:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1619K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1801-U 数据手册

SMD Type

Transistors

NPN Transistors

2SD1801

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

■ Features

0.50

● Low collector-to-emitter saturation voltage.

● Fast switching speed.

0.127

max

● Complementary to 2SB1201

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Tc=25°C

0.8

150

℃

Junction Temperature

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

Ic= 1 mA，RBE= ∞

= 100 uA， I = 0

CB= 50 V , I = 0

EB= 5V , I =0

E= 0

CBO

EBO

0.1

0.4

1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=1 A, I

=50 mA

0.15

0.9

=1 A, I

CE= 2V, I

= 100 mA

= 1.5 A

100

DC current gain

hFE

Turn-ON Time

550

See specified Test Circuit

Storage Time

stg

Fall Time

Collector Output capacitance

Transition frequency

CB= 10V, I

CE= 10V, I

= 0,f=1MHz

= 50mA

150

MHz

■ Classification of hfe(1)

Type

2SD1801-R

100-200

2SD1801-S

140-280

2SD1801-T

200-400

2SD1801-U

280-560

Range

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