Datasheet > 2SD1785_01

2SD1785_01

更新时间： 2024-11-27 07:31:31

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	30K
描述
Silicon NPN Triple Diffused Planar Transistor

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中文翻译

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数据手册

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2SD1785_01 数据手册

Equivalent

circuit

Darlington 2 S D1 7 8 5

(2.5kΩ)(200Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)

Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

External Dimensions FM20(TO220F)

Symbol

V^CBO

VCEO

VEBO

Ratings

10max

120min

2000min

1.5max

100typ

70typ

Ratings

Symbol

I^CBO

Conditions

Unit

µA

Unit

±0.2

4.2

±0.2

10.1

0.5

2.8

120

V^CB=120V

120

IEBO

V^EB=6V

V(BR)CEO

hFE

I^C=10mA

±0.2

ø3.3

V^CE=2V, IC=3A

I^C=2A, IB=3mA

V^CE=12V, IE=–0.1A

V^CB=10V, f=1MHz

6(Pulse10)

MHz

VCE(sat)

30(Tc=25°C)

150

°C

±0.15

1.35

COB

±0.15

1.35

Tstg

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

Weight : Approx 2.0g

a. Part No.

b. Lot No.

V^CC

(V)

VBB1

V^BB2

(V)

I^B1

I^B2

ton

tstg

(Ω)

(A)

(V)

(mA)

(µs)

(mA)

C E

–1.5

–3

0.5typ

5.5typ

1.5typ

–

IC VCE Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

(VCE=2V)

0.4

0.3

50 100

Collector-Emitter Voltage VCE(V)

Base-Emittor Voltage V^BE(V)

Base Current I^B(mA)

–

h^FEI^CTemperature Characteristics (Typical)

–

hFE IC Characteristics (Typical)

j-a t Characteristics

(VCE=2V)

10000

5000

1000

500

1000

500

100

0.5

100

1000

0.5

Collector Current IC(A)

0.03

0.1

0.03 0.05 0.1

0.5

Time t(ms)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

120

100

Typ

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

–0.05

0.05

–0.1

–0.5

–1

–5 –8

100

200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

138

中文翻译

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与2SD1785_01相关器件

型号	品牌	获取价格	描述	数据表
2SD1787	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SIP
2SD1787/P	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787/R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787C1	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787C1/P	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787C1/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787C1/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1787C1/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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