C
E
Equivalent
circuit
B
Darlington 2 S D1 7 8 5
(2.5kΩ)(200Ω)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
10max
10max
120min
2000min
1.5max
100typ
70typ
Ratings
Symbol
ICBO
Conditions
Unit
µA
mA
V
Unit
±0.2
4.2
±0.2
10.1
c
0.5
2.8
120
VCB=120V
V
120
IEBO
VEB=6V
V
V(BR)CEO
hFE
IC=10mA
6
V
±0.2
ø3.3
a
b
VCE=2V, IC=3A
IC=2A, IB=3mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
6(Pulse10)
1
A
IB
V
MHz
pF
VCE(sat)
fT
A
PC
30(Tc=25°C)
150
W
°C
°C
±0.15
1.35
Tj
COB
±0.15
1.35
Tstg
–55 to +150
+0.2
-0.1
0.85
+0.2
-0.1
0.45
±0.2
2.4
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
±0.2
2.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
VCC
(V)
RL
IC
VBB1
VBB2
(V)
IB1
IB2
ton
tstg
tf
(Ω)
(A)
(V)
(mA)
(µs)
(µs)
(µs)
(mA)
B
C E
30
10
3
10
–1.5
3
–3
0.5typ
5.5typ
1.5typ
–
–
–
IC VCE Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
(VCE=2V)
8
6
4
2
0
3
8
6
4
2
0
2
4A
1
0
0
2
4
6
0.4
1
2
0.3
1
5
10
50 100
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Base Current IB(mA)
–
hFE IC Temperature Characteristics (Typical)
–
–
hFE IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=2V)
(VCE=2V)
5
10000
10000
5000
5000
1000
500
1000
500
1
100
50
30
100
0.5
1
10
100
1000
0.5
Collector Current IC(A)
0.03
0.1
1
5
10
0.03 0.05 0.1
0.5
1
5
10
Time t(ms)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
30
20
10
20
10
120
100
Typ
5
1
50
0.5
Without Heatsink
Natural Cooling
0.1
Without Heatsink
2
0
0
–0.05
0.05
–0.1
–0.5
–1
–5 –8
3
5
10
50
100
200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
138