Datasheet > 2SD1782

2SD1782

更新时间： 2023-12-06 19:52:45

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	514K
描述
SOT-23

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数据手册

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2SD1782 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SD1782 ^{TRANSISTOR (NP}^N⁾

FEATURES

1. ^BASE

Low V_CE(sat)

2. ^EMITTER

3. ^COLLECTOR

High BV_CEO

Complements the 2SB1198

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

500

200

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=50μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEOI_C=2mA, I_B=0

V_(BR)EBO

I_CBO

I_E=50μA, I_C=0

V_CB=50V, I_E=0

0.5

390

0.5

μA

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

μA

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=3V, I_C=100mA

I_C=500mA, I_B=50mA

V_CE=10V, I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

120

Collector-emitter saturation voltage

Transition frequency

120

MHz

Collector output capacitance

C_ob

7.5

CLASSIFICATION OF h_FE(1)

Rank

Range

120-270

AJQ

180-390

MARKING

AJR

www.jscj-elec.com

Rev. - 2.0

12 3

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