2SD1781KT146QR

更新时间： 2024-10-02 13:04:23

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	59K
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2SD1781KT146QR 数据手册

2SD1781K

Transistors

Medium Power Transistor (32V, 0.8A)

2SD1781K

zExternal dimensions (Unit : mm)

zFeatures

1) Very Low V^CE(sat).

2.9 0.2

1.9 0.2

0.95 0.95

0.2

V^CE(sat)= ꢀ0.1V(Typ.)

1.1

−0.1

̈́I^C/ IB= 500УA / 50mAͅ

2) High current capacity in compact package.

3) Complements the 2SB1197K.

0.8 0.1

(2)

(1)

0~0.1

(3)

0.1

0.15

0.1

−0.06

0.4

−0.05

zStructure

Epitaxial planar type

NPN silicon transistor

All terminals have

same dimensions

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol : AF

∗

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25qC)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

0.8

1.5

200

150

A (DC)

A (Pulse)

Collector current

∗

Collector power dissipation

Junction temperature

Storage temperature

°C

Tstg

−55 to

150

°C

Single pulse Pw=100ms

∗

Rev.A

1/3

12 3 4

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