Datasheet > 2SD1781

2SD1781

更新时间： 2023-12-06 20:10:44

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	750K
描述
SOT-23

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数据手册

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2SD1781 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SD1781 TRANSISTOR (NPN)

FEATURES

Very low V_CE(sat). V_CE(sat)<0.4 V (Typ.) (I_C/I_B= 500mA / 50mA)

Complements to 2SB1197.

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

800

200

625

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=50μA,I_C=0

μA

V_CB=20V,I_E=0

0.5

390

0.4

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE(1)

V_CE=3V,I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V,I_C=50mA,f=100MHz

V_CB=10V,I_E=0,f=1MHz

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

MHz

f_T

150

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

120-270

AFQ

180-390

AFR

Range

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

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