Datasheet > 2SD1771Q

2SD1771Q

更新时间： 2024-01-30 16:38:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| TO-221VAR

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中文翻译

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技术参数
数据手册

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2SD1771Q 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SD1771Q 数据手册

Power Transistors

2SD1771, 2SD1771A

Silicon NPN triple diffusion planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For power amplification

1.0±0.1

For TV vertical deflection output

Complementary to 2SB1191 and 2SB1191A

Features

High collector to emitter V_CEO

Large collector power dissipation P_C

1.5max.

1.1max.

0.5max.

■

●

0.8±0.1

●

N type package enabling direct soldering of the radiating fin to

2.54±0.3

the printed circuit board, etc. of small electronic equipment.

5.08±0.5

1:Base

2:Collector

3:Emitter

Absolute Maximum Ratings (T =25˚C)

■

N Type Package

Parameter

Symbol

Ratings

Unit

Unit: mm

8.5±0.2

6.0±0.3

3.4±0.3

Collector to

2SD1771

2SD1771A

2SD1771

200

1.0±0.1

V_CBO

base voltage

Collector to

200

150

V_CEO

emitter voltage 2SD1771A

Emitter to base voltage

Peak collector current

Collector current

180

V_EBO

I_CP

R0.5

0.8±0.1

0 to 0.4

2.54±0.3

I_C

1.1 max.

5.08±0.5

Collector power T_C=25°C

P_C

1:Base

dissipation

Ta=25°C

1.3

2:Collector

3:Emitter

N Type Package (DS)

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 200V, I_E= 0

I_EBO

V_EB= 4V, I_C= 0

µA

2SD1771

2SD1771A

Collector to emitter

voltage

150

180

V_CEO

V_EBO

I_C= 5mA, I_B= 0

Emitter to base voltage

I_E= 0.5mA, I_C= 0

h_FE1

V_CE= 10V, I_C= 100mA

V_CE= 10V, I_C= 300mA

I_C= 500mA, I_B= 50mA

V_CE= 10V, I_C= 100mA, f = 1MHz

V_CB= 10V, I_E= 0, f = 1MHz

240

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

60 to 140

100 to 240

12 3

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