5秒后页面跳转
2SD1771Q(DS) PDF预览

2SD1771Q(DS)

更新时间: 2024-02-12 17:39:32
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管放大器
页数 文件大小 规格书
2页 52K
描述
Transistor

2SD1771Q(DS) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

2SD1771Q(DS) 数据手册

 浏览型号2SD1771Q(DS)的Datasheet PDF文件第2页 
Power Transistors  
2SD1771, 2SD1771A  
Silicon NPN triple diffusion planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
For power amplification  
1.0±0.1  
For TV vertical deflection output  
Complementary to 2SB1191 and 2SB1191A  
Features  
High collector to emitter VCEO  
Large collector power dissipation PC  
1.5max.  
1.1max.  
0.5max.  
0.8±0.1  
N type package enabling direct soldering of the radiating fin to  
2.54±0.3  
the printed circuit board, etc. of small electronic equipment.  
5.08±0.5  
1:Base  
2:Collector  
3:Emitter  
1
2
3
Absolute Maximum Ratings (T =25˚C)  
C
N Type Package  
Parameter  
Symbol  
Ratings  
Unit  
Unit: mm  
8.5±0.2  
6.0±0.3  
3.4±0.3  
Collector to  
2SD1771  
2SD1771A  
2SD1771  
200  
1.0±0.1  
VCBO  
V
base voltage  
Collector to  
200  
150  
VCEO  
V
emitter voltage 2SD1771A  
Emitter to base voltage  
Peak collector current  
Collector current  
180  
VEBO  
ICP  
6
V
A
A
R0.5  
R0.5  
2
0.8±0.1  
0 to 0.4  
2.54±0.3  
IC  
1
25  
1.1 max.  
5.08±0.5  
Collector power TC=25°C  
PC  
W
1:Base  
dissipation  
Ta=25°C  
1.3  
1
2
3
2:Collector  
3:Emitter  
N Type Package (DS)  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = 200V, IE = 0  
IEBO  
VEB = 4V, IC = 0  
50  
µA  
2SD1771  
2SD1771A  
Collector to emitter  
voltage  
150  
180  
6
VCEO  
VEBO  
IC = 5mA, IB = 0  
V
V
Emitter to base voltage  
IE = 0.5mA, IC = 0  
*
hFE1  
VCE = 10V, IC = 100mA  
VCE = 10V, IC = 300mA  
VCE = 10V, IC = 300mA  
IC = 500mA, IB = 50mA  
VCE = 10V, IC = 100mA, f = 1MHz  
VCB = 10V, IE = 0, f = 1MHz  
60  
50  
240  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
1
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
fT  
20  
27  
MHz  
pF  
Collector output capacitance  
Cob  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
60 to 140  
100 to 240  
1

与2SD1771Q(DS)相关器件

型号 品牌 获取价格 描述 数据表
2SD1771TX PANASONIC

获取价格

暂无描述
2SD1772 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD1772 ISC

获取价格

Silicon NPN Power Transistors
2SD1772 PANASONIC

获取价格

Silicon NPN triple diffusion planar type
2SD1772/2SD1772A ETC

获取价格

2SD1772. 2SD1772A - NPN Transistor
2SD1772A PANASONIC

获取价格

Silicon NPN triple diffusion planar type
2SD1772A SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD1772A ISC

获取价格

Silicon NPN Power Transistors
2SD1772AP ETC

获取价格

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186
2SD1772AQ ETC

获取价格

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186