Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
For power amplification
1.0±0.1
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A
Features
High collector to emitter VCEO
Large collector power dissipation PC
1.5max.
1.1max.
0.5max.
■
●
0.8±0.1
●
●
N type package enabling direct soldering of the radiating fin to
2.54±0.3
the printed circuit board, etc. of small electronic equipment.
5.08±0.5
1:Base
2:Collector
3:Emitter
1
2
3
Absolute Maximum Ratings (T =25˚C)
■
C
N Type Package
Parameter
Symbol
Ratings
Unit
Unit: mm
8.5±0.2
6.0±0.3
3.4±0.3
Collector to
2SD1771
2SD1771A
2SD1771
200
1.0±0.1
VCBO
V
base voltage
Collector to
200
150
VCEO
V
emitter voltage 2SD1771A
Emitter to base voltage
Peak collector current
Collector current
180
VEBO
ICP
6
V
A
A
R0.5
R0.5
2
0.8±0.1
0 to 0.4
2.54±0.3
IC
1
25
1.1 max.
5.08±0.5
Collector power TC=25°C
PC
W
1:Base
dissipation
Ta=25°C
1.3
1
2
3
2:Collector
3:Emitter
N Type Package (DS)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 200V, IE = 0
IEBO
VEB = 4V, IC = 0
50
µA
2SD1771
2SD1771A
Collector to emitter
voltage
150
180
6
VCEO
VEBO
IC = 5mA, IB = 0
V
V
Emitter to base voltage
IE = 0.5mA, IC = 0
*
hFE1
VCE = 10V, IC = 100mA
VCE = 10V, IC = 300mA
VCE = 10V, IC = 300mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 100mA, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
60
50
240
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
1
1
V
V
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
20
27
MHz
pF
Collector output capacitance
Cob
*hFE1 Rank classification
Rank
hFE1
Q
P
60 to 140
100 to 240
1