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2SD1770 PDF预览

2SD1770

更新时间: 2024-11-05 05:57:15
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无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 233K
描述
Silicon NPN Power Transistor

2SD1770 数据手册

 浏览型号2SD1770的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1770  
DESCRIPTION  
·High Power Dissipation  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 150V(Min.)  
·Complement to Type 2SB1190  
APPLICATIONS  
·Power amplifier applications.  
·TV vertical deflection output applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
200  
V
V
V
A
A
150  
6
1
Collector Current-Continuous  
Collector Current-Peak  
ICM  
2
Total Power Dissipation  
@ TC=25℃  
25  
PC  
W
Total Power Dissipation  
@ Ta=25℃  
1.4  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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