Datasheet > 2SD1766

2SD1766

更新时间： 2024-11-21 14:53:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1670K
描述
SOT-89-3L

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数据手册

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2SD1766 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SD1766 TRANSISTOR (NPN)

1. ^BASE

FEATURES

Low V_CE(sat).V_CE(sat)=0.16V(Typ.)(I_C/I_B=2A/0.2A)

Complements to 2SB1188

2. ^COLLECTOR

3. ^EMITTER

MARKING

DBP

DBQ

DBR

Solid dot = Green molding

compound device.

MAXIMUM RATINGS (T =25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector dissipation

P_C

500

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V_(BR)CBOI_C=50μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=50μA, I_C=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_CBO

I_EBO

V_CB=20V, I_E=0

V_EB=4V, I_C=0

μA

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=3V, I_C=500mA

390

0.8

Collector-emitter saturation voltage

Transition frequency

I_C=2A, I_B=0.2A

V_CE=5V, I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

82-180

120-270

DBQ

180-390

Range

Marking

DBP

DBR

www.jscj-elec.com

Rev. - 2.2

12 3 4

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