JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SD1766 TRANSISTOR (NPN)
1. BASE
FEATURES
z
Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
Complements to 2SB1188
2. COLLECTOR
3. EMITTER
z
MARKING
DBP
DBQ
DBR
Solid dot = Green molding
compound device.
MAXIMUM RATINGS (T =25℃ unless otherwise noted)
a
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Unit
40
V
32
V
5
V
Collector Current -Continuous
Collector dissipation
2
A
PC
500
mW
Operation Junction and
Storage Temperature Range
TJ,Tstg
℃
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
40
32
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
ICBO
IEBO
VCB=20V, IE=0
VEB=4V, IC=0
1
1
μA
μA
DC current gain
hFE(1)
VCE(sat)
fT
VCE=3V, IC=500mA
82
390
0.8
Collector-emitter saturation voltage
Transition frequency
IC=2A, IB=0.2A
V
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
100
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
82-180
120-270
DBQ
180-390
Range
Marking
DBP
DBR
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1
Rev. - 2.2