Datasheet > 2SD1760

2SD1760

更新时间： 2024-09-24 06:22:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Medium Power Transistor

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中文翻译

获取价格

数据手册

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2SD1760 数据手册

SMD Type

Transistors

Medium Power Transistor

2SD1760

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Low VCE(sat), VCE(sat) = 0.5V (typical)

(I^C= 2A, IB = 0.2A).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

4.5

Collector current (pulse) *

Collector power dissipation T^c= 25

Junction temperature

I^CP

T^j

150

Storage temperature

Tstg

-55 to +150

* Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

BV^CBOIC=50ìA

BV^CEOIC=1mA

BV^EBOIE=50ìA

Collector cutoff current

Emitter cutoff current

I^CBO

I^EBO

VCB=40V

VEB=4V

ìA

Collector-emitter saturation voltage

Forward current transfer ratio

Transition frequency

V^CE(sat)IC=2A,IB=0.2A

h^FEVCE=3V,IC=0.5A

f^T

0.5

390

VCE=5V, IE= -500mA, f=30MHz

VCB=10V, IE=0A, f=1MHz

MHz

Output capacitance

C^ob

hFE Classification

Rank

h^FE

82 180

120 270

180 390

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