Datasheet > 2SD1758

2SD1758

更新时间： 2024-04-09 19:02:24

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	241K
描述
32V,2A,General Purpose PNP Bipolar Transistor

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2SD1758 数据手册

Product Specification

Medium Power Transistor

2SD1758

FEATURES



Low V_CE(sat)

V_CE(sat)= 0.5V(Typ.)

(I_C/I_B= 2A/0.2A)



Complements the 2SB1182

APPLICATIONS



Epitaxial planar type



NPN silicon transistor

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SD1758

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

D1758

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current(DC)

Collector Current(Pulse)

Base Current

I_CP

2.5

I_B

Collector Power Dissipation

Junction and Storage temperature range

P_C

℃

T_J,T_STG

-55 to +150

STM0482A

www.gmesemi.com

12 3 4

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