Datasheet > 2SD1757KQ(SOT-23)

2SD1757KQ(SOT-23)

更新时间： 2024-02-10 05:23:44

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描述
Transistor

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数据手册

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2SD1757KQ(SOT-23) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
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2SD1757KQ(SOT-23) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SD1757K TRANSISTOR (NPN)

FEATURES

Optimal for muting.

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

6.5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

500

℃

P_C

200

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

6.5

I_E=50μA,I_C=0

0.5

560

0.4

μA

V_CB=20V,I_E=0

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

120

V_CE=3V,I_C=100mA

I_C= 500mA, I_B=50mA

V_CE=5V, I_C= 50mA ,f=100MHz

VCB=10V,IE=0,f=1MHZ

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

150

MHz

Collector Output Capacitance

Cob

CLASSIFICATION OF h_FE

Rank

120-270

AAQ

180-390

AAR

270-560

AAS

Range

MARKING

A,May,2011

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