Datasheet > 2SD1757K

2SD1757K

更新时间： 2023-12-06 20:10:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	518K
描述
SOT-23

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数据手册

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2SD1757K 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SD1757K TRANSISTOR (NPN)

FEATURES

Optimal for muting.

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

6.5

Collector Current -Continuous

Collector Power Dissipation

500

200

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

6.5

I_E=50μA,I_C=0

0.5

560

0.4

μA

V_CB=20V,I_E=0

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

120

V_CE=3V,I_C=100mA

I_C= 500mA, I_B=50mA

V_CE=5V, I_C= 50mA ,f=100MHz

VCB=10V,IE=0,f=1MHZ

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

150

MHz

Collector Output Capacitance

Cob

CLASSIFICATION OF h_FE

Rank

120-270

AAQ

180-390

AAR

270-560

AAS

Range

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3

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