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2SD1720 PDF预览

2SD1720

更新时间: 2024-11-23 05:57:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 233K
描述
Silicon NPN Power Transistor

2SD1720 数据手册

 浏览型号2SD1720的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1720  
DESCRIPTION  
·High Collector Current:: IC= 5A  
·Low Collector Saturation Voltage  
: VCE(sat)= 1.0V(Max.)@IC= 3A  
·Wide Area of Safe Operation  
·Complement to Type 2SB1291  
APPLICATIONS  
·Designed for low frequency power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-EmiteVoltage  
Emitter-Base Voltage  
VALUE  
UNT  
V
60  
60  
V
5
5
V
Collector Current-Continuous  
Collector Current-Peak  
A
ICM  
10  
A
Total Power Dissipation  
@ TC=25℃  
PC  
40  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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