Datasheet > 2SD1719

2SD1719

更新时间： 2024-11-19 06:22:47

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描述
Silicon NPN Triple Diffusion Planar Type

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中文翻译

获取价格

数据手册

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2SD1719 数据手册

SMD Type

Transistors

Silicon NPN Triple Diffusion Planar Type

2SD1719

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High forward current transfer ratio hFE which has satisfactory linearity

High emitter-base voltage (Collector open) VEBO

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

100

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

I^CP

I^B

Collector power dissipation

1.3

T^a= 25

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-emitter voltage

Collector-base cutoff curent

Emitter-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Symbol

V^CEO

I^CBO

Testconditons

Min

Typ

Max

Unit

IC = 25 mA, IB = 0

VCB = 100 V,IE = 0

VEB = 15 V, IC = 0

VCE = 4 V, IC = 1 A

100

2000

0.5

ìA

I^EBO

h^FE

300

V^CE(sat)IC = 5 A, IB = 0.1 A

MHz

ìs

f^T

t^on

t^stg

t^f

VCE = 12 V, IC = 0.5 A , f = 10 MHz

0.3

1.5

0.6

I^C= 5 A,IB1 = -IB2 = 0.1 A, VCC = 50V

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

300 1200

800 2000

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