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2SD1619-R PDF预览

2SD1619-R

更新时间: 2024-09-30 01:05:31
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科信 - KEXIN 放大器晶体管
页数 文件大小 规格书
3页 1311K
描述
NPN Transistors

2SD1619-R 数据手册

 浏览型号2SD1619-R的Datasheet PDF文件第2页浏览型号2SD1619-R的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1619  
1.70 0.1  
Features  
Very small size making it easy to provide highdensity,  
small-sized hybrid IC’s.  
Complementary to 2SB1119  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
25  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector - Emitter Voltage  
Emitter - Base Voltage  
25  
5
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
(Note.1)  
I
C
1
A
I
CP  
2
0.5  
1.3  
150  
P
C
W
Junction Temperature  
TJ  
Storage Temperature Range  
Note.1:Mounted on ceramic board (250mm2 ×0.8mm)  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
25  
25  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 uAI  
Ic= 1 mARBE= ∞  
= 100 uAI = 0  
CB= 20 V , I = 0  
EB= 4V , I =0  
E= 0  
I
E
C
I
CBO  
EBO  
V
V
E
0.1  
0.1  
0.3  
1.2  
560  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=500 mA, I  
B
=50 mA  
=50 mA  
0.1  
V
C
=500 mA, I  
B
0.85  
V
V
V
V
CE= 2V, I  
CE= 2V, I  
C
= 50 mA  
= 1 A  
100  
40  
DC current gain  
hFE  
C
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
CE= 10V, I  
E
= 0,f=1MHz  
15  
pF  
f
C
= 50mA  
180  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD1619-R  
100-200  
DB R*  
2SD1619-S  
140-280  
DB S*  
2SD1619-T  
200-400  
DB T*  
2SD1619-U  
280-560  
DB U*  
1
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