Datasheet > 2SD1616AU

2SD1616AU

更新时间： 2023-12-06 20:10:01

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	848K
描述
小信号晶体管

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2SD1616AU 数据手册

2SD1616AU

NPN Silicon Epitaxial Planar Transistor

The transistor is subdivided into three groups Y, G

and L, according to its DC current gain

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

120

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current (PW ≤ 10 ms)

Power Dissipation

I_CM

0.75

P_tot

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

167

Unit

Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Date: 17/04/2023 Rev: 02

12 3 4 5

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