Datasheet > 2SD1615

2SD1615

更新时间： 2024-10-14 12:53:43

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TYSEMI		/
页数	文件大小	规格书
1页	137K
描述
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V

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2SD1615 数据手册

SSMMDD TTyyppee

Transistors

Product specification

2SD1615

Features

World Standard Miniature Package.

Low VCE(sat) VCE(sat) = 0.15 V

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector Current (pulse) *1

Total power dissipation at 25 Ambient Temperature *2

Junction temperature

I^C

2.0

P^T

T^j

150

Storage temperature

T^stg

-55 to +150

* 1Pulse Test PW

10ms, Duty Cycle

50%.

*2 When mounted on ceramic substrate of 16 cm²X 0.7 mm

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

ICBO

Testconditons

Min

135

Typ

Max

100

600

0.3

Unit

VCB = 60 V, IE = 0 A

V^EB= 6.0 V, I^C= 0 A

V^CE= 2.0 V, I^C= 100 mA

I^EBO

h^FE

290

0.15

0.9

Collector saturation voltage *

Base saturation voltage *

Base-emitter voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = 1 A, IB = 50 mA

V^BE(sat)I^C= 1 A, I^B= 50 mA

1.2

V^BE

f^T

V^CE= 2.0 V, I^C= 50 mA

600

700

MHz

V^CE= 2.0 V, I^E= -100 mA

V^CB= 10 V, I^E= 0, f = 1.0 MHz

160

C^ob

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

135 270

200 400

300 600

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