Datasheet > 2SD1614_15

2SD1614_15

更新时间： 2024-11-21 01:07:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	754K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1614_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD1614

1.70 0.1

■ Features

● High DC Current Gain:hFE 135 to 600.

● Low V^CE(sat)

● Complementary to 2SB1114

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

℃

150

Storage Temperature Range

stg

-55 to 150

Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

E= 0

Ic= 1 mA，I = 0

= 100 uA， I

C= 0

CBO

EBO

CB= 40 V , I

^EB= 6V , I

= 0

0.1

0.5

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=2 A, I

=50 mA

0.3

=2 A, I

0.95

^CE= 6V, I

CE= 2V, I

C= 100 mA

C= 2 A

0.65 0.68 0.75

135

350

600

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= -50mA

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1614-M

135-270

2SD1614-L

200-400

2SD1614-K

300-600

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2SD1614-L	KEXIN	获取价格	NPN Transistors
2SD1614-M	KEXIN	获取价格	NPN Transistors
2SD1614-T1	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
2SD1614-T1XL	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
2SD1614-T1XM	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
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