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2SD1614-M PDF预览

2SD1614-M

更新时间: 2024-11-19 01:07:15
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科信 - KEXIN /
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3页 754K
描述
NPN Transistors

2SD1614-M 数据手册

 浏览型号2SD1614-M的Datasheet PDF文件第2页浏览型号2SD1614-M的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1614  
1.70 0.1  
Features  
High DC Current Gain:hFE 135 to 600.  
Low VCE(sat)  
Complementary to 2SB1114  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
40  
20  
6
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
I
C
2
A
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
(Note.1)  
I
CP  
3
P
C
2
W
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Note.1:PW 10 ms, Duty cycle 20%.  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
40  
20  
6
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 uAI  
E= 0  
Ic= 1 mAI = 0  
B
I
E
= 100 uAI  
C= 0  
I
CBO  
EBO  
V
V
CB= 40 V , I  
EB= 6V , I  
E
= 0  
0.1  
0.1  
0.5  
1.2  
uA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=2 A, I  
B
=50 mA  
=50 mA  
0.3  
V
C
=2 A, I  
B
0.95  
V
BE  
V
V
V
V
V
CE= 6V, I  
CE= 2V, I  
CE= 2V, I  
C= 100 mA  
C= 100 mA  
C= 2 A  
0.65 0.68 0.75  
135  
40  
350  
600  
DC current gain  
hFE  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
CE= 10V, I  
E
= 0,f=1MHz  
= -50mA  
28  
pF  
f
E
200  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD1614-M  
135-270  
XM  
2SD1614-L  
200-400  
XL  
2SD1614-K  
300-600  
XK  
1
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