Datasheet > 2SD1611

2SD1611

更新时间： 2024-11-17 06:23:15

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2页	43K
描述
Silicon NPN Triple Diffusion Planar Type Darlington

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中文翻译

获取价格

数据手册

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2SD1611 数据手册

SMD Type

Transistors

Silicon NPN Triple Diffusion Planar Type Darlington

2SD1611

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High forward current transfer ratio hFE

High collector-base voltage (Emitter open) VCBO

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Internal Connection

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

500

400

Unit

Peak collector current

I^CP

Collector power dissipation

Ta = 25

T^j

1.3

150

Junction temperature

Storage temperature

Tstg

-55 to +150

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