型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1609B | HITACHI |
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Power Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SD1609C | HITACHI |
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Power Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SD1609D | HITACHI |
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0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN | |
2SD1610 | HITACHI |
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Silicon NPN Epitaxial | |
2SD1610B | HITACHI |
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0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN | |
2SD1610C | HITACHI |
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0.1A, 200V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN | |
2SD1610D | ETC |
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TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
2SD1611 | TYSEMI |
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High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO | |
2SD1611 | PANASONIC |
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Silicon NPN triple diffusion planar type Darlington(For power amplification) | |
2SD1611 | KEXIN |
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Silicon NPN Triple Diffusion Planar Type Darlington |