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2SD1580D PDF预览

2SD1580D

更新时间: 2024-11-29 12:59:43
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 256K
描述
Transistor

2SD1580D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SD1580D 数据手册

 浏览型号2SD1580D的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1580  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 1.0V(Max.)@ IC= 4A  
·High Collector Power Dissipation  
·Good Linearity of hFE  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for low frequency power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
100  
80  
UNIT  
V
V
V
A
A
5
Collector Current-Continuous  
Collector Current-Pulse  
7
ICM  
10  
Collector Power Dissipation  
@ Ta=25℃  
1.5  
PC  
W
Collector Power Dissipation  
@ TC=25℃  
40  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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