Datasheet > 2SD1576

2SD1576

更新时间： 2024-11-26 06:20:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	220K
描述
Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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2SD1576 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD1576 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1576

DESCRIPTION

·High Collector-Base Breakdown Voltage-

: V_(BR)CBO= 1500V (Min.)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector- Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1500

700

UNIT

Collector Current- Continuous

Collector Current-Peak

Base Current-Peak

I_CM

I_BM

2.5

Collector Power Dissipation

@ T_a=25℃

2.5

P_C

Collector Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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2SD1579-K	NEC	获取价格	暂无描述
2SD1579-K-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
2SD1579-L	NEC	获取价格	暂无描述
2SD1579-L-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
2SD1579-M	NEC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon