2SD1563

更新时间： 2024-11-23 06:17:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	228K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1563 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1563

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V (Min)

·Wide Area of Safe Operation

·Complement to Type 2SB1086

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

120

5.0

UNIT

Collector Current-Continuous

Collector Current-Peak

1.5

I_CM

Total Power Dissipation

@ T_C=25℃

P_C

Total Power Dissipation

@ T_a=25℃

1.2

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

℃

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SD1563相关器件

型号	品牌	获取价格	描述	数据表
2SD1563/NQ	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/NR	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/P	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/PQ	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/PR	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/QR	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563/R	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SD1563A	ROHM	获取价格	Epitaxial Planar NPN Silicon Transistor
2SD1563A	ISC	获取价格	Silicon NPN Power Transistors
2SD1563A	SAVANTIC	获取价格	Silicon NPN Power Transistors