Datasheet > 2SD1556_2015

2SD1556_2015

更新时间： 2024-11-27 01:17:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	81K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD1556_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SD1556

DESCRIPTION

·With TO-3P(H)IS package

·Built-in damper diode

·High voltage ,high speed

·Low collector saturation voltage

APPLICATIONS

·For color TV horizontal output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

ABSOLUTE MAXIMUM RATINGS AT Tc=25℃

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

1500

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

600

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

℃

150

-55~150

T_j

T_stg

JMnic

12 3

中文翻译

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