生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 150 W |
最大功率耗散 (Abs): | 150 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | VCEsat-Max: | 1.5 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1525(Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,30A I(C),TO-264AA | |
2SD1525_09 | TOSHIBA |
获取价格 |
High Current Switching Applications | |
2SD1527 | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1527 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1527-E | RENESAS |
获取价格 |
0.5A, 1000V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1528 | ISC |
获取价格 |
Silicon NPN Power Transistor | |
2SD1528P | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB | |
2SD1528Q | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB | |
2SD1528R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB | |
2SD1529 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |