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2SD1525 PDF预览

2SD1525

更新时间: 2024-11-25 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 219K
描述
Silicon NPN Darlington Power Transistor

2SD1525 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

2SD1525 数据手册

 浏览型号2SD1525的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD1525  
DESCRIPTION  
·High DC Current Gain  
: hFE= 1000(Min.)@ IC= 20A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = 100V(Min.)  
APPLICATIONS  
·Designed for high current switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltge  
Emitter-Base Voltage  
VALUE  
100  
100  
5
UNIT  
V
V
V
Collector Current-Continuous  
Base Current- Continuous  
30  
A
IB  
5
A
Collector Power Dissipation  
@TC=25  
PC  
150  
150  
-55~150  
W
Tj  
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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