2SD1511GQ

更新时间： 2024-11-25 13:04:23

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松下 - PANASONIC		/
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中文翻译

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数据手册

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2SD1511GQ 数据手册

Transistor

2SD1511

Silicon NPN epitaxial planer type darlington

Unit: mm

For low-frequency output amplification

1.5±0.1

4.5±0.1

1.6±0.2

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer bammer: h_FE

= 4000 to 2000.

45°

●

A shunt resistor is omitted from the driver.

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

0.4±0.08

0.4±0.04

●

0.5±0.08

1.5±0.1

3.0±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

marking

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

100

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

1.5

Marking symbol : P

Internal Connection

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 25V, I_E= 0

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

I_EBO

V_EB= 4V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CBO

V_CEO

V_EBO

I_C= 100µA, I_E= 0

100

I_C= 1mA, I_B= 0

I_E= 100µA, I_C= 0

h_FE

V_CE= 10V, I_C= 1A^*2

I_C= 1.0A, I_B= 1.0mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

40000

1.8

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

2.2

Transition frequency

f_T

150

MHz

^*2Pulse measurement

Rank classification

Rank

h_FE

4000 ~ 10000 8000 ~ 20000 16000 ~ 40000

PQ PR PS

Marking Symbol

中文翻译

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