Datasheet > 2SD1506R

2SD1506R

更新时间： 2024-11-26 09:56:19

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
3页	120K
描述
Transistor

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中文翻译

获取价格

数据手册

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2SD1506R 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1506

DESCRIPTION

·With TO-126 package

·Complement to type 2SB1065

·Low collector saturation voltage

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_CM

Collector current-peak

4.5

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

1.2

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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