Datasheet > 2SD1499P

2SD1499P

更新时间： 2024-11-26 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	47K
描述
TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| SOT-186

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中文翻译

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数据手册

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2SD1499P 数据手册

Power Transistors

2SD1499

Silicon NPN triple diffusion planar type

For high power amplification

Complementary to 2SB1063

Unit: mm

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

Features

■

●

Extremely satisfactory linearity of the forward current transfer

φ3.1±0.1

ratio h_FE

●

Wide area of safe operation (ASO)

●

High transition frequency f_T

●

Full-pack package which can be installed to the heat sink with

one screw

1.3±0.2

1.4±0.1

+0.2

–0.1

0.5

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

2.54±0.25

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

100

5.08±0.5

100

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

I_C

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +155

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

h_FE1

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 100V, I_E= 0

V_EB= 3V, I_C= 0

µA

V_CE= 5V, I_C= 20mA

V_CE= 5V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

h_FE3

V_BE

200

V_CE= 5V, I_C= 3A

1.8

2.0

Collector to emitter saturation voltage V_CE(sat)

I_C= 3A, I_B= 0.3A

Transition frequency

f_T

V_CE= 5V, I_C= 0.5A, f = 1MHz

V_CB= 10V, f = 1MHz

MHz

Collector output capacitance

C_ob

^*h_FE2Rank classification

Rank

h_FE2

60 to 120

100 to 200

12 3

中文翻译

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