Datasheet > 2SD1444AP

2SD1444AP

更新时间： 2024-10-01 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	81K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7A I(C) \| SOT-186

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中文翻译

获取价格

数据手册

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2SD1444AP 数据手册

Power Transistors

2SD1445, 2SD1445A

Silicon NPN epitaxial planar type

For power amplification, power switching and low-voltage switching

Unit: mm

Complementary to 2SB0948 (2SB948) and 2SB0948A (2SB948A)

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

ꢀ.7 ^0.ꢀ

I Features

•

Low collector to emitter saturation voltage V_CE(sat)

High-speed switching

Satisfactory linearity of forward current transfer ratio h_FE

Large collector current I_C

Full-pack package which can be installed to the heat sink with one

screw

φ ꢁ.1 0.1

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

I Absolute Maximum Ratings T_C= 25°C

Parameter

Symbol

Rating

Unit

ꢀ.54 0.ꢁ

5.08 0.5

2SD1445

2SD1445A

2SD1445

2SD1445A

V_CBO

Collector to base

1: Base

2: Collector

3: Emitter

voltage

ꢀ ꢁ

V_CEO

Collector to

EIAJ: SC-67

TO-220F Package

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

2SD1445

I_CBO

V_CB= 40 V, I_E= 0

V_CB= 50 V, I_E= 0

V_EB= 5 V, I_C= 0

I_C= 10 mA, I_B= 0

µA

Collector cutoff

current

2SD1445A

Emitter cutoff current

I_EBO

µA

2SD1445

V_CEO

Collector to emitter

voltage

2SD1445A

Forward current transfer ratio

h_FE1

V_CE= 2 V, I_C= 0.1 A

h_FE2

V_CE= 2 V, I_C= 3 A

260

0.6

1.5

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

I_C= 10 A, I_B= 0.33 A

V_CE= 10 V, I_C= 0.5 A, f = 10 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

I_C= 3 A, I_B1= 0.1 A, I_B2= − 0.1 A,

V_CC= 20 V

120

200

0.3

0.4

0.1

MHz

C_ob

t_on

µs

Storage time

t_stg

µs

Fall time

t_f

µs

Note) The part numbers in the parenthesis show conventional part number.

Note) : Rank classification

Ordering can be made by the common rank (PQ rank h_FE2= 90 to 260) in the

rank classification. (2SD1445A only)

Rank

h_FE2

90 to 180

130 to 260

12 3 4

中文翻译

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与2SD1444AP相关器件

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2SD1444AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7A I(C) \| SOT-186
2SD1444AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7A I(C) \| SOT-186
2SD1444P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 7A I(C) \| SOT-186
2SD1444Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 7A I(C) \| SOT-186
2SD1444R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 7A I(C) \| SOT-186
2SD1445	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD1445	ISC	获取价格	Silicon NPN Power Transistors
2SD1445	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SD1445/2SD1445A	ETC	获取价格	2SD1445. 2SD1445A - NPN Transistor
2SD1445A	PANASONIC	获取价格	Silicon PNP epitaxial planar type