Datasheet > 2SD1437F

2SD1437F

更新时间： 2024-01-10 22:34:20

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2SD1437F 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1437

DESCRIPTION

·Collector-Emitter Breakdown Voltage

:V_(BR)CEO= 60V(Min)

·Complement to Type 2SB1033

·Low Collector Saturation Voltage

APPLICATIONS

·Designed for low frequency power amplification.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Total Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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