2SD1407

更新时间： 2024-02-17 20:20:56

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	162K
描述
Silicon NPN Power Transistors

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数据手册

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2SD1407 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1407

DESCRIPTION

·With TO-220Fa package

·High breakdown voltage

·Low collector saturation voltage

·Complement to type 2SB1016

APPLICATIONS

·Power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

100

UNIT

Open base

Open collector

I_B

Base current

0.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

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