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2SD1380 PDF预览

2SD1380

更新时间: 2024-11-11 07:31:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
Silicon NPN Power Transistors

2SD1380 数据手册

 浏览型号2SD1380的Datasheet PDF文件第2页浏览型号2SD1380的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1380  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SB1009  
·Low collector saturation voltage  
APPLICATIONS  
·For low frequency power amplifier  
applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
40  
Open base  
32  
V
Open collector  
5
2
V
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
10  
W
Tj  
150  
-55~150  
Tstg  

与2SD1380相关器件

型号 品牌 获取价格 描述 数据表
2SD1380/P ROHM

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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD1380/PR ROHM

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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD1380/Q ROHM

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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD1380/QR ROHM

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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD1380/R ROHM

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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD1380P ISC

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暂无描述
2SD1380Q ISC

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Transistor
2SD1380R ISC

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Transistor
2SD1381 ETC

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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-126ISO
2SD1381F ROHM

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Power Transistor (80V, 1A)