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2SD1275/2SD1275A PDF预览

2SD1275/2SD1275A

更新时间: 2022-01-19 09:05:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 67K
描述
2SD1275. 2SD1275A - NPN Transistor Darlington

2SD1275/2SD1275A 数据手册

 浏览型号2SD1275/2SD1275A的Datasheet PDF文件第2页浏览型号2SD1275/2SD1275A的Datasheet PDF文件第3页 
Power Transistors  
2SD1275, 2SD1275A  
Silicon NPN triple diffusion planar type Darlington  
Unit: mm  
For power amplification  
10.0±0.2  
5.5±0.2  
4.2±0.2  
Complementary to 2SB0949 (2SB949) and 2SB0949A (2SB949A)  
2.7±0.2  
Features  
High foward current transfer ratio hFE  
φ3.1±0.1  
High-speed switching  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
Absolute Maximum Ratings (T =25˚C)  
C
+0.2  
–0.1  
0.5  
Parameter  
Symbol  
Ratings  
Unit  
0.8±0.1  
Collector to  
2SD1275  
2SD1275A  
2SD1275  
60  
VCBO  
V
2.54±0.25  
base voltage  
Collector to  
80  
5.08±0.5  
60  
VCEO  
V
1
2
3
1:Base  
emitter voltage 2SD1275A  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
VEBO  
ICP  
5
V
A
A
4
IC  
2
Internal Connection  
Collector power TC=25°C  
35  
C
E
PC  
W
dissipation  
Ta=25°C  
2
B
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
2SD1275  
2SD1275A  
2SD1275  
2SD1275A  
VCB = 60V, IE = 0  
1
1
2
2
2
mA  
current  
VCB = 80V, IE = 0  
VCE = 30V, IB = 0  
VCE = 40V, IB = 0  
VEB = 5V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
hFE1  
mA  
mA  
V
Emitter cutoff current  
Collector to emitter 2SD1275  
voltage 2SD1275A  
60  
80  
IC = 30mA, IB = 0  
VCE = 4V, IC = 1A  
1000  
2000  
Forward current transfer ratio  
Base to emitter voltage  
*
hFE2  
VCE = 4V, IC = 2A  
10000  
2.8  
VBE  
VCE = 4V, IC = 2A  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = 2A, IB = 8mA  
2.5  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 10V, IC = 0.5A, f = 1MHz  
20  
0.5  
4
MHz  
µs  
IC = 2A, IB1 = 8mA, IB2 = –8mA,  
VCC = 50V  
µs  
1
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
2000 to 5000 4000 to 10000  
Note) The part numbers in the parenthesis show conventional part number.  
1

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