Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
Unit: mm
For power amplification
10.0±0.2
5.5±0.2
4.2±0.2
Complementary to 2SB0949 (2SB949) and 2SB0949A (2SB949A)
2.7±0.2
Features
High foward current transfer ratio hFE
■
φ3.1±0.1
●
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
Parameter
Symbol
Ratings
Unit
0.8±0.1
Collector to
2SD1275
2SD1275A
2SD1275
60
VCBO
V
2.54±0.25
base voltage
Collector to
80
5.08±0.5
60
VCEO
V
1
2
3
1:Base
emitter voltage 2SD1275A
Emitter to base voltage
Peak collector current
Collector current
80
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
VEBO
ICP
5
V
A
A
4
IC
2
Internal Connection
Collector power TC=25°C
35
C
E
PC
W
dissipation
Ta=25°C
2
B
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
Unit
2SD1275
2SD1275A
2SD1275
2SD1275A
VCB = 60V, IE = 0
1
1
2
2
2
mA
current
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
hFE1
mA
mA
V
Emitter cutoff current
Collector to emitter 2SD1275
voltage 2SD1275A
60
80
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
1000
2000
Forward current transfer ratio
Base to emitter voltage
*
hFE2
VCE = 4V, IC = 2A
10000
2.8
VBE
VCE = 4V, IC = 2A
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 8mA
2.5
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
0.5
4
MHz
µs
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
µs
1
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
2000 to 5000 4000 to 10000
Note) The part numbers in the parenthesis show conventional part number.
1