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2SD1227M PDF预览

2SD1227M

更新时间: 2024-11-01 22:45:07
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 126K
描述
Medium Power Transistor 32V, 2A

2SD1227M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):2 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SD1227M 数据手册

 浏览型号2SD1227M的Datasheet PDF文件第2页浏览型号2SD1227M的Datasheet PDF文件第3页浏览型号2SD1227M的Datasheet PDF文件第4页 
Transistors  
Medium Power Transistor (32V, 2A)  
2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /  
2SD1919 / 2SD1227M  
FFeatures  
FExternal dimensions (Units: mm)  
1) Low VCE(sat).  
VCE(sat) = 0.5V (Typ.)  
(IC / IB = 2A / 0.2A)  
2) Complements the  
2SB1188 / 2SB1182 / 2SB1240 /  
2SB891F / 2SB822 / 2SB1277 /  
2SB911M  
FStructure  
Epitaxial planar type  
NPN silicon transistor  
(96-217-B24)  
256  

2SD1227M 替代型号

型号 品牌 替代类型 描述 数据表
NTE20 NTE

功能相似

Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Outpu

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