生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
其他特性: | BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | DARLINGTON WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 8000 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.4 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1205AR | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP |
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2SD1205Q | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP |
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2SD1205R | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP |
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2SD1207 | SANYO |
获取价格 |
Large-Current Switching Applications |
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2SD1207 | FOSHAN |
获取价格 |
TO-92LM |
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2SD1207R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR |
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2SD1207S | ONSEMI |
获取价格 |
PNP / NPN Epitaxial Planar Silicon Transistors |
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2SD1207S-AE | ONSEMI |
获取价格 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP hFE = 140-280, TO-92 3 8.5x6.0 / M |
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2SD1207T | ONSEMI |
获取价格 |
Large-Current Switching Applications |
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2SD1207T-AE | ONSEMI |
获取价格 |
暂无描述 |
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