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2SD1159 PDF预览

2SD1159

更新时间: 2024-11-30 06:17:43
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页数 文件大小 规格书
4页 112K
描述
Silicon NPN Power Transistors

2SD1159 数据手册

 浏览型号2SD1159的Datasheet PDF文件第2页浏览型号2SD1159的Datasheet PDF文件第3页浏览型号2SD1159的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1159  
DESCRIPTION  
·With TO-220 package  
APPLICATIONS  
·TV horizontal deflection output,  
·High-current switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
200  
60  
UNIT  
V
Open base  
V
Open collector  
6
V
Collector current (DC)  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
4.5  
A
ICM  
10  
A
PC  
TC=25  
40  
W
Tj  
150  
-55~150  
Tstg  

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TRANSISTOR 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Pur
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