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2SD1154 PDF预览

2SD1154

更新时间: 2024-11-30 07:31:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 80K
描述
isc Silicon NPN Power Transistor

2SD1154 数据手册

 浏览型号2SD1154的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1154  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 200V (Min)  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for horizontal deflection output for B/W TV set.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
MAX  
350  
200  
6
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
7
A
ICM  
10  
A
Collector Power Dissipation  
@TC=25  
PC  
50  
W
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
isc Websitewww.iscsemi.cn  

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