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2SD1135 PDF预览

2SD1135

更新时间: 2024-11-24 06:18:47
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 137K
描述
Silicon NPN Power Transistors

2SD1135 数据手册

 浏览型号2SD1135的Datasheet PDF文件第2页浏览型号2SD1135的Datasheet PDF文件第3页浏览型号2SD1135的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1135  
DESCRIPTION  
·With TO-220C package  
·Complement to type 2SB859  
APPLICATIONS  
·For low frequency power amplifier  
applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
100  
V
V
V
A
A
W
Open base  
80  
Open collector  
5
4
8
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
TC=25ꢀ  
40  
Tj  
150  
-45~150  
Tstg  

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