Datasheet > 2SD1119

2SD1119

更新时间： 2024-10-31 14:53:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1637K
描述
SOT-89-3L

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数据手册

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2SD1119 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SD1119 TRANSISTOR (NPN)

SOT-89-3L

1. ^BASE

FEATURES

Low collector-emitter saturation voltage V^CE(sat)

Satisfactory operation performances at high efficiency with the low

voltage power supply.

2. ^COLLECTOR

3. ^EMITTER

MARKING

T Q

T R

Solid dot = Green molding compound

device.

2 3 0 -3 8 0

3 4 0 -6 0 0

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Dissipation

P_C

500

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=100μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10μA, I_C=0

V_CB=10V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=6V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

230

150

600

DC current gain

Collector-emitter saturation voltage

Transition frequency

I_C=3A, I_B=0.1A

V_CE=6V, I_C=50mA, f=200MHz

V_CB=20V, f=1MHz

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

230-380

340-600

Range

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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