Datasheet > 2SD1119

2SD1119

更新时间： 2024-11-28 14:52:03

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	711K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SD1119 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	25
Collector Current - Continuous：	3	DC current gain - Min：	230
DC current gain - Max：	600	Transition frequency：	150
Package：	SOT-89	Storage Temperature Range：	-55-150
class：	Transistors

2SD1119 数据手册

2SD1119

SOT-89 Transistor(NPN)

1. ^BASE

SOT-89

2. ^COLLECTOR

4.6

4.4

1.6

1.4

1.8

1.4

3. ^EMITTER

2.6

2.4

4.25

3.75

Features

0.8

MIN

0.53

Low collector-emitter saturation voltage VCE(sat)

Satisfactory operation performances at high efficiency with the low

voltage power supply.

0.40

0.48

2x)

0.35

1.5

0.44

0.37

0.13

3.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Dissipation

P_C

500

150

-55-150

T_J

Junction Temperature

Storage Temperature

℃

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10μA, I_C=0

V_CB=10V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=6V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

230

150

600

DC current gain

Collector-emitter saturation voltage

Transition frequency

I_C=3A, I_B=0.1A

V_CE=6V, I_C=50mA, f=200MHz

V_CB=20V, f=1MHz

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

230-380

340-600

Range

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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