Datasheet > 2SD1119

2SD1119

更新时间： 2024-11-27 12:53:43

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TYSEMI		晶体晶体管
页数	文件大小	规格书
1页	135K
描述
Satisfactory operation performances at high efficiency with the lowvoltage power supply.

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2SD1119 数据手册

SSMMDD TTyyppee

Product specification

2SD1119

Features

Low collector-emitter saturation voltage V^CE(sat).

Satisfactory operation performances at high efficiency with

the lowvoltage power supply.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^C= 1 mA, I^B= 0

Min

Typ

Max

Unit

Collector-emitter voltage

Emitter-base voltage

V^CEO

V^EBO

ICBO

I^E= 10 ìA, I^C= 0

VCB = 10 V, IB = 0

V^CE= 2 V, I^C= 0.5 A

V^CE= 2 V, I^C= 2 A

Collector-base cutoff current

0.1

ìA

230

150

600

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Transition frequency

V^CE(sat)I^C= 3 A, I^B= 0.1 A

f^T

V^CB= 6 V, I^E= -50 mA, f = 200 MHz

V^CB= 20 V, I^E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

230 380

340 600

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