Datasheet > 2SD1119

2SD1119

更新时间： 2024-11-27 07:31:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	509K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SD1119 数据手册

2SD1119

SOT-89

1. ^BASE

TRANSISTOR (NPN)

FEATURES

Low collector-emitter saturation voltage V^CE(sat)

Satisfactory operation performances at high efficiency with the low

voltage power supply.

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Dissipation

P_C

500

150

-55-150

T_J

Junction Temperature

Storage Temperature

℃

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10μA, I_C=0

V_CB=10V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=6V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

230

150

600

DC current gain

Collector-emitter saturation voltage

Transition frequency

I_C=3A, I_B=0.1A

V_CE=6V, I_C=50mA, f=200MHz

V_CB=20V, f=1MHz

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

230-380

340-600

Range

Marking

JinYu

semiconductor

www.htsemi.com

中文翻译

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