2SD1117

更新时间： 2024-09-16 07:31:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	97K
描述
isc Silicon NPN Power Transistor

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2SD1117 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1117

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 40V(Min)

·Low Collector-Emitter Saturation Voltage-

: V_CE(sat)= 1.2V(Max) @I_C= 5A

·Wide Area of Safe Operation

·Complement to Type 2SB850

APPLICATIONS

·Designed for audio amplifier, series regulators and general

purpose power amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

2.5

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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